Strain-Assisted Doping of Diamond for Next-generation Microelectronics
Principal Investigator: Professor Yang LU (Professor from Department of Mechanical Engineering)
This project is showcased in the fourth exhibition – Innovation for Impacts.
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About the scholar
Professor Yang LU
Research Interests:
Micro/Nanomechanics
in situ Electron Microscopy
Nano-Manufacturing
Mechanical Metamaterial
Strain Engineering
Email: ylu1@hku.hk
Website: https://www.mech.hku.hk/academic-staff/lu-y
Project information
Counterfeiting threatens the global economy and security. According the report issued by the United States Patent and Trademark Office (USPTO) in 2020 “the value of global counterfeiting and pirated products is estimated US $ 4.5 trillion a year.” Despite enormous efforts, conventional anti-counterfeiting approaches such as QR codes can be easily fabricated due to limited data encryption capacity on a 2D in-plane space.
How can we increase the encryption density in a limited space?
Doping is an essential and one of the basic processes for making semiconductor devices. In the doping process, one or more elements are introduced into a material (e.g., the doping of phosphorus to make n-type or boron to making p-type in silicon). For diamond, due to its rigid lattice and small lattice parameter, it is hard to introduce other elements into diamond, which remains to be a problem not only for the doping of diamond, but also for the development of diamond semiconductor devices. To tackle this problem, a strain-assisted doping strategy is proposed in this invention. The lattice parameter of diamond is elastically stretched, followed by the doping of elements. In this manner, the doping efficiency can be improved.
Novelty
- To use diamond- the best semiconductor material
- To improve doping efficiency and accuracy of diamond
- To accelerate the development of diamond microelectronics
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